| PART |
Description |
Maker |
| K4B2G0846E |
2Gb E-die DDR3 SDRAM
|
Samsung
|
| HMT351S6CFR8C-G7 HMT351S6CFR8C-H9 HMT351S6CFR8C-PB |
DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT351V7CFR4C-H9 HMT41GV7CMR4C-H9 HMT325V7CFR8C HM |
DDR3 SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT325V7EFR8A-PB HMT325V7EFR8A-RD HMT325V7EFR8A-H9 |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb E-die
|
Hynix Semiconductor
|
| K4S1G0732BNBSP K4S1G0732B-TC75 K4S1G0732B |
SDRAM stacked 1Gb B-die
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H1G0638C-UC/LA2 K4H1G0738C-UC/LA2 K4H1G0738C-UC/ |
Stacked 1Gb C-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| H5TC2G63FFR-G7A H5TC2G63FFR-H9A H5TC2G63FFR-PBA H5 |
2Gb DDR3L SDRAM
|
Hynix Semiconductor
|
